Components

  • Out of stock

    The Sharp LT021MDO is a GaAlAs laser diode with VSIS chip structure. It has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode cathode and photo diode cathode.

     Factory spec sheet found HERE.

    SPECIFICATIONS:

    Output Power: 10 mW typical, 15 mW max. Wavelength: 780 nm typical, 795 nm max. INFRARED Operating Voltage: 1.8 Volts typical Threshold Current: 45 mA typical Operating Current: 75 mA typical Monitor Current: 3.0 mA typical. Operating Temperature: -10 to 60 deg.C. Package: TO-9, 9 mm diameter base, Low cap type. These are new old stock diodes, individually characterized in factory containers.

    Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

  • The Toshiba TOLD9200 is a gain guided laser diode with InGaAlP structure. It was the first commercially available visible laser diode with a wavelength of 670nm. It has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode anode and photo diode cathode. Specifications: Output Power: 2.0mW typical, 3.0mW maximum Wavelength: 670nm typical, 680nm maximum, RED Operating Voltage: 2.3 Volts typical Threshold Current: 76mA typical Operating Current: 85mA typical Monitor Current: 0.45mA typical Operating Temperature: -10 to 50 deg.C Package: TO-9, 9mm diameter base Factory spec sheet can be found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.
  • The Mitsubishi ML720J11S-03 are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength around 1310 nm. They are well suited for light source in long distance digital transmission systems. They are hermetically sealed devices with the photo diode for optical output monitoring.  These are new diodes, individually characterized, in factory envelopes. SPECIFICATIONS: Output Power: 5 mW Wavelength: 1310 nm typical, +/-3 nm Operating Voltage: 1.1 Volts typical Threshold Current: 6 mA typical Operating Current: 16 mA typical Monitor Current: 200 uA typical Package: TO-18, 5.6 mm diameter base.

     A factory spec sheet can be found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

  • The Mitsubishi ML920J16S-21 are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength around 1470 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring.  These are new diodes, individually characterized, in factory envelopes. SPECIFICATIONS: Output Power: 5 mW Wavelength: 1470 nm typical, +/-3 nm Operating Voltage: 1.0 Volts typical Threshold Current: 6 mA typical Operating Current: 21 mA typical Monitor Current: 500 uA typical Package: TO-18, 5.6 mm diameter base.

     A factory spec sheet can be found HERE

    Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

     
  • The Mitsubishi ML920J11S-29 are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength around 1550 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring.  These are new diodes, individually characterized, in factory envelopes. SPECIFICATIONS: Output Power: 5 mW Wavelength: 1550 nm typical, +/-3 nm Operating Voltage: 1.0 Volts typical Threshold Current: 9 mA typical Operating Current: 28 mA typical Monitor Current: 300 uA typical Package: TO-18, 5.6 mm diameter base.

     A factory spec sheet can be found HERE

    Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

     
  • The Blue Sky CircuLaser VPSL0635-005X5B is a InGaAlP laser diode with quantum well structure. It has an integrated beam correcting lens that eliminates most of the astigmatism that is inherent in diode lasers. It also has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode anode and photo diode cathode. These are new diodes, individually characterized in factory envelopes. Specifications: Output Power: 5.0mW maximum. Wavelength: 637nm typical, 645nm maximum, RED Circularity: 1.2:1 maximum Operating Voltage: 2.2 Volts typical Threshold Current: 30mA typical Operating Current: 40mA typical Monitor Current: 150uA typical. Operating Temperature: -10 to 50 deg.C Package: TO-18, 5.6mm diameter base Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items. Factory spec sheet found HERE
  • The Hitachi HL-6312G is a index guided laser diode with multi-quantum well structure. It has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode anode and photo diode cathode. Specifications: Output Power: 5.0 mW typical, 6.0 mW maximum Wavelength: 635 nm typical, 640 nm maximum, RED Operating Voltage: 2.6 Volts typical Threshold Current: 20 mA typical Operating Current: 55 mA typical Monitor Current: 0.4 mA typical Operating Temperature: -10 to 50 deg.C Package: TO-9, 9 mm diameter base A factory spec sheet can be found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.
  • The Samsung SLD63518262 is a InGaAlP laser diode with quantum well structure. It has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode cathode and photo diode anode. Specifications: Output Power: 5.0mW typical, 7.0mW maximum Wavelength: 637nm typical, 645nm maximum. RED Operating Voltage: 2.2 Volts typical Threshold Current: 30mA typical Operating Current: 40mA typical Monitor Current: 0.3mA typical. Operating Temperature: -10 to 60 deg.C Package: TO-18, 5.6mm diameter base Factory spec sheet found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.
  • Out of stock
    The Sharp LT023PS is a GaAlAs laser diode with VSIS chip structure. It has a built in photo diode for monitoring the laser output for use in automatic power control (APC) circuits. The common case pin is laser diode cathode and photo diode anode. These are new old stock diodes, individually characterized in factory containers. Specifications: Output Power: 3.0mW typical, 5.0mW maximum Wavelength: 780nm typical, 795nm maximum, INFRARED Operating Voltage: 1.75 Volts typical Threshold Current: 45mA typical Operating Current: 55mA typical Monitor Current: 0.4mA typical Operating Temperature: -10 to 70 deg.C Package: TO-18, 5.6mm diameter base Factory spec sheet found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

  • The Mitsubishi ML601J24-01 is an infrared laser diode with a wavelength around 785nm. It does not have a built in photo diode, therefore will need a driver circuit operating in automatic current control (ACC) mode. The case common pin is laser diode cathode. These are new old stock diodes, individually characterized in envelopes. Specifications: Output Power: 60mW typical, 70mW maximum Wavelength: 785nm typical, +/- 10nm Infrared Operating Voltage: 1.8 Volts typical Threshold Current: 40mA typical Operating Current: 95mA typical Monitor Current: No internal photodiode Package: TO-18, 5.6mm diameter base Factory spec sheet found HERE Note: Due to the sensitive nature of laser diodes, there is no warranty or exchanges on these items.

Title

Go to Top